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 MACOM IC
China CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT for sale

CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT

CGHV96050F2 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) on a Silicon Carbide (SiC) substrate. Its functions and applications ....
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