Berton Electronics Limited

Manufacturer from China
Verified Supplier
1 Years
Home / Products / MACOM IC /

CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT

Contact Now
Berton Electronics Limited
Visit Website
City:shenzhen
Country/Region:china
Contact Person:MsJessica
Contact Now

CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT

Ask Latest Price
Video Channel
Brand Name :MACOM
Model Number :CGHV96050F2
Place of Origin :Philippines
MOQ :10
Price :1500
Payment Terms :T/T
Supply Ability :500
Delivery Time :5-8days
Packaging Details :40/box
Product Type :GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
Package Height :0.75 mm
Package Type :Surface Mount
Supply Voltage :3.3V
Package Material :Ceramic
Frequency Range :DC to 110 GHz
Input Return Loss :20dB
Output Return Loss :20 dB
Application :RF and Microwave
Package Size :3 mm x 3 mm
Operating Temperature :-40°C to +85°C
Power Output :Up to 100 W
Gain :Up to 40 dB
Noise Figure :0.5 dB
Factory Pack Quantity :20
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description
CGHV96050F2 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) on a Silicon Carbide (SiC) substrate. Its functions and applications are as follows:

Functions

  • High - frequency operation: It operates in the frequency range of 8.4 - 9.6 GHz, making it suitable for high - frequency applications.
  • Low - power degradation: It has a power degradation of less than 0.1 dB, which means it can maintain stable performance with low - power loss during operation.
  • Excellent power - added efficiency: Compared with other technologies, this GaN internal - matched FET can provide excellent power - added efficiency. GaN has superior performance compared to silicon or gallium arsenide, with a higher breakdown voltage, a higher saturated electron drift velocity, and a higher thermal conductivity. Compared with GaAs transistors, GaN HEMTs also offer a higher power density and a wider bandwidth.
  • Optimal electrical and thermal performance: Housed in a metal / ceramic flange package, it achieves optimal electrical and thermal performance.

Applications

  • Marine radar: It is used in marine radar systems for detecting targets at sea, such as ships and obstacles, helping to ensure the safety of navigation.
  • Weather monitoring: It can be applied to weather - monitoring radar to detect meteorological phenomena such as clouds, rain, and snow, providing data support for weather forecasting and climate research.
  • Air traffic control: In air traffic control systems, it is used in radar equipment to monitor the position and flight path of aircraft, ensuring the safety and order of air traffic.
  • Maritime vessel traffic control: It helps monitor and manage the traffic of vessels in ports and shipping lanes, improving traffic efficiency and safety.
  • Port security: It is used in port security monitoring systems, such as radar - based intrusion detection systems, to detect and prevent unauthorized vessels from entering the port area.
  • Marine Radar – Used in shipborne navigation and collision avoidance systems.

  • Weather Monitoring – Supports high-power radar systems for meteorological observation.

  • Air Traffic Control (ATC) – Enhances radar and communication systems for aviation safety.

  • Maritime Vessel Traffic Control – Ensures efficient and secure shipping lane management.

  • Port Security & Surveillance – Used in high-frequency radar for coastal and port monitoring

  • Higher Power Density: More power in a smaller footprint compared to GaAs or Si-based transistors.

  • Better Thermal Performance: GaN-on-SiC technology improves heat dissipation.

  • Wider Bandwidth: Suitable for broadband applications without sacrificing efficiency.


Inquiry Cart 0