ART2K0FE is a 2000W LDMOS RF power transistor developed by Ampleon

Functionality

1. Power Amplification
   • Delivers 2000W of output power at 1dB gain compression (PL = 2000W) with a power gain (Gp) of 28.4 dB and drain efficiency (ηD) of 72.1% .
   • Operates across a frequency range of 1 MHz to 400 MHz, making it suitable for ultra-wideband applications .
2. Voltage Flexibility
   • Supports drain-source voltages (VDS) from 30V to 65V, enabling Class E operation up to 53V and Class C operation with full transistor shutdown .
   • High breakdown voltage ensures robust performance in demanding environments.
3. Rugged Design
   • Integrated dual-sided ESD protection safeguards against electrostatic discharge during handling and operation .
   • Exceptional thermal stability and ruggedness prevent device degradation over time, even under mismatched load conditions .
4. Efficiency & Thermal Management
   • Achieves >69% drain efficiency across its operating range, minimizing power losses and heat dissipation .
   • Designed for broadband operation with low input return loss (-13.9 dB at PL = 2000W), reducing signal reflection .

Applications

1. Industrial, Scientific, and Medical (ISM)
   • Plasma generators for semiconductor manufacturing and materials processing.
   • MRI systems and particle accelerators, where high power density and reliability are critical .
   • CO₂ lasers and industrial heating equipment requiring stable RF energy delivery.
2. Broadcast & Communications
   • FM radio and VHF TV transmitters, providing efficient power amplification for wide coverage .
   • Non-cellular communication systems (e.g., military radios, satellite ground stations) and UHF radar for surveillance and navigation .
   • Base stations and repeaters in public safety networks (e.g., TETRA, P25).
3. Aerospace & Defense
   • High-power amplifiers for avionics systems and airborne radar.
   • Electronic warfare (EW) and countermeasures requiring rapid signal modulation.
4. Research & Development
   • RF test benches and prototyping for advanced wireless technologies.
   • Academic and industrial labs studying high-power RF interactions in physics and engineering.

Key Benefits

• Wide-Range Compatibility: Supports diverse voltage modes (Class E/C) and frequency bands, reducing the need for multiple discrete components .
• Reliability: Rugged construction and ESD protection ensure long-term performance in harsh environments .
• Design Flexibility: Available with evaluation boards (e.g., ART2K0FE/RFPOWERDEMO) and simulation models (Cadence AWR, Keysight ADS) for streamlined integration .
• RoHS Compliance: Meets environmental standards for global applications .

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