Berton Electronics Limited
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BAT68E6327 is a Schottky barrier diode from Infineon Technologies,designed for RF and high-frequency applications.
Electrical Characteristics
Peak Reverse Voltage (Vr): 8V
Maximum Forward Current (If): 130mA
Low Forward Voltage Drop (Vf): 390mV (typ) at 5mA
Ultra-Low Capacitance: 1pF @ 0V, 1MHz
High-Frequency Performance
Optimized for RF and microwave circuits due to fast switching and low noise
Low series resistance (Rs): 10Ω @ 5mA, 10kHz
Package & Reliability
SOT-23-3 (SC-59, TO-236-3) surface-mount package
Wide temperature range: -55°C to +150°C
RoHS compliant & lead-free
The BAT68E6327 is widely used in:
RF signal detection & mixing (e.g., VHF/UHF circuits)
Voltage clamping & protection circuits
High-speed data networks & wireless communication (e.g., base stations, satellite receivers)
Low-power signal rectification in portable electronics
Package: SOT-23-3 (3-pin)
Power Dissipation: 150mW max
Equivalent Models: BAT68-07W, BAT68-08S (for alternate pinouts)